Shimane Univ. Fujita-Yoshida Lab.
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Achievements: Toshiyuki Yoshida丂丂Shimane University, Natural Science and Technology, Associate Professor
**** Sorry, partly in Japanese ****
<Peer-reviewed journal papers>
1. Toshiyuki Yoshida, Tamotsu Hashizume and Hideki Hasegawa,
乬Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si (111) Surfaces by Contactless Capacitance-voltage and Photoluminescence Methods乭, Japanese Journal of Applied Physics, Part 1, 36 3B (1997) pp. 1453-1459.
DOI:10.1143/JJAP.36.1453
2. Tamotsu Hashizume, Yasuhiko Ishikawa, Toshiyuki Yoshida and Hideki Hasegawa,
乬In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2x4) GaAs Surfaces乭, Japanese Journal of Applied Physics, Part 1, 37 3B, (1998) pp. 1626-1630.
DOI:10.1143/JJAP.37.1626
3. Sahana Chakraborty, Toshiyuki Yoshida, Tamotsu Hashizume and Hideki Hasegawa,
乬Formation of ultrathin oxynitride layers on Si (100) by low-temperature electron cyclotron resonance N2O plasma oxynitridation process乭, Journal of Vacuum Science and Technology B, 16 4 (1998) pp. 2159-2164.
DOI:10.1116/1.589845
4. Hiroshi Takahashi, Toshiyuki Yoshida, Morimichi Muto, Takamasa Sakai and Hideki Hasegawa,
乬In-situ Characterization Technique of Compound Semiconductor Heterostructure Growth and Device Processing Steps Based on UHV Contactless Capacitance-Voltage Measurement乭, Solid State Electronics, 43 8, (1999) pp. 1561-1570.
DOI:10.1016/S0038-1101(99)00104-5
5. Toshiyuki Yoshida, Hideki Hasegawa and Takamasa Sakai,
乬A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Processing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements乭, Japanese Journal of Applied Physics, Part 1, 38 4B, (1999) pp. 2349-2354.
DOI:10.1143/JJAP.38.2349
6. Tatsuo Shiozawa, Toshiyuki Yoshida, Tamotsu Hashizume and Hideki Hasegawa,
乬Correlation Between Interface State Properties and Electron Transport at Ultrathin Insulator/Si Interfaces乭, Applied Surface Science, 159-160 (2000)
pp. 98-103.
DOI:10.1016/S0169-4332(00)00068-4
7. Toshiyuki Yoshida and Hideki Hasegawa,
乬Ultrahigh-Vacuum Contactless Capacitance-Voltage Characterization of Hydrogen- Terminated- Free Silicon Surfaces乭, Japanese Journal of Applied Physics, Part 1, 39 7B, (2000) pp. 4504-4508.
DOI:10.1143/JJAP.39.4504
8. Hideki Hasegawa, Hiroshi Takahashi, Toshiyuki Yoshida and Takamasa Sakai,
乬Ultra high vacuum-based in situ characterization of compound semiconductor surfaces by a contactless capacitance-voltage technique乭, Materials Science and Engineering, B80 (2001) pp. 147-151.
DOI:10.1016/S0921-5107(00)00638-3
9. Toshiyuki Yoshida and Hideki Hasegawa,
乬Realization of UHV Compatible Defect-Free Hydrogen Terminated Silicon Surfaces with the Use of UHV Contactless Capacitance-Voltage Method乭, Applied Surface Science, 175-176 (2001) pp. 163-168.
DOI:10.1016/S0169-4332(01)00030-7
10. Toshiaki Tsuchiya, Toshiyuki Yoshida, and Yasuhiro Sato,
乬Impact of Hot Carrier Stress on Low-Frequency Noise Characteristics in Floating-Body Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors乭, Japanese Journal of Applied Physics, Part 1, 41 7A (2002) pp. 4427-4431.
DOI:10.1143/JJAP.41.4427
11. Toshiyuki Yoshida, Yoshiki Ebiko, Michiko Takei, Nobuo Sasaki, and Toshiaki Tsuchiya,
乬Grain-Boundary Related Hot Carrier Degradation Mechanism in Low-Temperature Polycrystalline Silicon Thin-Film Transistors乭, Japanese Journal of Applied Physics, Part 1, 42 4B (2003) pp. 1999-2003.
DOI:10.1143/JJAP.42.1999
12. Toshiyuki Yoshida,
乬Matching Properties of Polycrystalline Silicon Thin-Film-Transistors Studied by a Wide-Use Circuit Simulator乭, Japanese Journal of Applied Physics, 47 11 (2008) pp.8382-8384.
DOI:10.1143/JJAP.47.8382
13. Toshiyuki Yoshida, and Tamotsu Hashizume,
乬Air-Gap Capacitance-Voltage Analyses of p-InP Surfaces Covered with Natural Oxide乭, Applied Physics Express, 3 (2010) pp.116601_1-3.
DOI:10.1143/APEX.3.116601
14. 嶳杮恀媊丆屗揷峗棽丆愳搰悞岹丆媑揷弐岾
乬僴僀僽儕僢僪儕僇僶儕儗僗曽幃僜僼僩僗僀僢僠儞僌徃埑僠儑僢僷夞楬乭丆揹婥妛夛榑暥帍俢乮嶻嬈墳梡晹栧帍乯, 131 9 (2011) pp.1171-1172.
DOI:10.1541/ieejias.131.1171
15. Toshiyuki Yoshida, and Tamotsu Hashizume,
乬Modification of Surface State Density Distribution of p-InP Surfaces by Nitrogen Radical Exposure乭, Japanese Journal of Applied Physics, 50 (2011) pp.070209_1-3.
DOI:10.1143/JJAP.50.070209
16. Toshiyuki Yoshida, and Tamotsu Hashizume,
乬Studies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method乭, Applied Physics Letters, 101 (2012) pp.122102_1-4.
DOI:10.1063/1.4753927
17. Yasuhisa Fujita, Kyota Moriyama, Yuto Hiragino, Yutaka Furubayashi, Hideki Hashimoto, and Toshiyuki Yoshida,
乬Electroluminescence from nitrogen doped ZnO nanoparticles乭, Physica Status Solidi C, 11 (2014) pp.1260-1262.
DOI:10.1002/pssc.201300645
18. Toshiyuki Yoshida,
乬Effects of natural and anneal-induced oxides on atomic-layer-deposition Al2O3/In0.53Ga0.47As interfaces乭, Japanese Journal of Applied Physics, 54 (2015) pp.010301_1-4.
DOI:10.7567/JJAP.54.010301
19. Yuto Hiragino, Toshimi Tanaka, Hiroshi Takeuchi, Akira Takeuchi, Jie Lin, Toshiyuki Yoshida, and Yasuhisa Fujita,
乬Synthesis of nitrogen-doped ZnO nanoparticles by RF thermal plasma乭, Solid-State Electronics, 118 (2016) pp.41-45.
DOI: 10.1016/j.sse.2016.01.003
20. Toshiyuki Yoshida, Kazato Shinohara, Daiki Itohara, and Yasuhisa Fujita,
乬Effects of thermal pressing on ZnO nanoparticle layers deposited by drop casting乭, e-Journal of Surface Science and Nanotechnology, 14 (2016) pp.175-178.
DOI:10.1380/ejssnt.2016.175
21. Itohara Daiki, Kazato Shinohara, Toshiyuki Yoshida, and Yasuhisa Fujita,
乬P-channel and n-channel thin-film-transistor operation on sprayed ZnO nanoparticle layers乭, Journal of Nanomaterials, 2016 (2016) pp.8219326_1-6.
DOI:10.1155/2016/8219326
22. Yasuhisa Fujita, Shogo Yanase, Hirokazu Nishikori, Yutaka Furubayashi, Jie Lin, and Toshiyuki Yoshida,
乬Near ultraviolet light emitting diodes using ZnMgO:N/ZnO hetero-junction grown by MOVPE乭, Journal of Crystal Growth, 464 (2017) pp.226-230.
DOI: 10.1016/j.jcrysgro.2016.10.085
23. Senthilkumar Kasilingam, Toshiyuki Yoshida, and Yasuhisa Fujita,
乬Formation of D-VZn Complex Defects and Possible p-type Conductivity of ZnO Nanoparticle via Hydrogen Adsorption乭, Journal of Materials Science, 53 (2018) pp.11977-11985.
DOI:10.1007/s10853-018-2498-7
24. Toshiyuki Yoshida, Islam Md Maruful, and Yasuhisa Fujita,
乬Trial of Ga-doping on ZnO Nanoparticles by Thermal Treatment with Ga2O3 Nanoparticles乭, e-Journal of Surface Science and Nanotechnology, 18 (2020) pp.12-17.
DOI: 10.1380/ejssnt.2020.12
Contact address
1060 Nishikawatsu, Matsue, Shimane, Japan, 690-8504
Shimane University
Professor: Yasuhisa Fujita
TEL/FAX: (0852)32-6257
E-mail: fujita@riko.shimane-u.ac.jp
Associate Professor: Toshiyuki Yoshida
TEL/FAX: (0852)32-6346
E-mail: yosisi@riko.shimane-u.ac.jp